D. Korucu Et Al. , "Evaluation of lateral barrier height of inhomogeneous photolithography- fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K," Materials Science in Semiconductor Processing , vol.15, no.5, pp.480-485, 2012
Korucu, D. Et Al. 2012. Evaluation of lateral barrier height of inhomogeneous photolithography- fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K. Materials Science in Semiconductor Processing , vol.15, no.5 , 480-485.
Korucu, D., EFEOĞLU, H., Turut, A., & ALTINDAL, Ş., (2012). Evaluation of lateral barrier height of inhomogeneous photolithography- fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K. Materials Science in Semiconductor Processing , vol.15, no.5, 480-485.
Korucu, D. Et Al. "Evaluation of lateral barrier height of inhomogeneous photolithography- fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K," Materials Science in Semiconductor Processing , vol.15, no.5, 480-485, 2012
Korucu, D. Et Al. "Evaluation of lateral barrier height of inhomogeneous photolithography- fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K." Materials Science in Semiconductor Processing , vol.15, no.5, pp.480-485, 2012
Korucu, D. Et Al. (2012) . "Evaluation of lateral barrier height of inhomogeneous photolithography- fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K." Materials Science in Semiconductor Processing , vol.15, no.5, pp.480-485.
@article{article, author={D. Korucu Et Al. }, title={Evaluation of lateral barrier height of inhomogeneous photolithography- fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K}, journal={Materials Science in Semiconductor Processing}, year=2012, pages={480-485} }