Jackson, C. M. Et Al. 2013. Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies. Journal of Applied Physics , vol.113, no.20 .

Jackson, C. M., Arehart, A. R., ÇİNKILIÇ, E., McSkimming, B., Speck, J. S., & Ringel, S. A., (2013). Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies. Journal of Applied Physics , vol.113, no.20.

Jackson, Christine Et Al. "Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies," Journal of Applied Physics , vol.113, no.20, 2013

Jackson, Christine M. Et Al. "Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies." Journal of Applied Physics , vol.113, no.20, 2013

Jackson, C. M. Et Al. (2013) . "Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies." Journal of Applied Physics , vol.113, no.20.

@article{article, author={Christine M. Jackson Et Al. }, title={Interface trap characterization of atomic layer deposition Al 2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies}, journal={Journal of Applied Physics}, year=2013}