Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures

Baydilli E., Tan S., Tecimer H. U., ALTINDAL Ş.

Physica B: Condensed Matter, vol.598, 2020 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 598
  • Publication Date: 2020
  • Doi Number: 10.1016/j.physb.2020.412457
  • Journal Name: Physica B: Condensed Matter
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Barrier height, Current-transport mechanisms, Graphene doping, Metal-polymer-semicondutor, Thermionic emission
  • Hakkari University Affiliated: No

Abstract

The possible current-transport mechanisms (CTMs) of Au/(%7Gr-doped)PVA/n-GaAs structure was examined between 80 K and 360 K. The forward bias semi-logarithmic I–V curves have two different linear regions; as 0.30 V and 0.56 V (Region I), and 0.72 V and 0.92 V (Region II). Contrary to classical thermionic emission (TE) theory, the ideality factor (n) decreases but the zero bias barrier height (ΦBo) increases while the temperature increases for both regions. The plots of n vs ΦB0, q/2 kT vs ΦBo and q/2 kT vs n−1-1 have two linear regions from 80 K to 160 K and 180 K–360 K. This indicates the Double Gaussian Distribution (DGD). Experimental Richardson constant (A*) was acquired as 8.73 A/cm2K2 and 8.14 A/cm2K2 for Region I and II which are quite close to theoretical A* value for n-GaAs. Consequently, the predominant CTMs at M/S interfaces can be clarified by DGD on the basis of TE.