Akademik Veri Yönetim Sistemi
Science China: Physics, Mechanics and Astronomy, cilt.55, sa.9, ss.1604-1612, 2012 (SCI-Expanded)
The frequency dependent of the forward and reverse bias capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of Au/p-InP SBDs have been investigated in the frequency range of 20 kHz-10 MHz and voltage range of -5 - 5 V at room temperature. The effects of surface states (N ss) and series resistance (R s) on C-V and G/w-V characteristics have been investigated in detail. The frequency dependent N ss and R s profiles were obtained for various applied bias voltages. The experimental results show that the main electrical parameters of Au/p-InP SBD such as barrier height (πB), the density of acceptor concentration (N A), N ss and Rs were found strongly frequency and voltage dependent. The values of C and G/w decrease with increasing frequency due to a continuous distribution of N ss localized at the metal/semiconductor (M/S) interface. The effect of R s on C and G is found considerably high especially at high frequencies. Therefore, the high frequencies of the values of C and G were corrected for the effect of R s in the whole measured bias range to obtain the real diode capacitance C c and conductance G c using the Nicollian and Goetzberger technique. The distribution profile of R s-V gives a peak depending on the frequency especially at low frequencies and disappears with increasing frequencies due to the existence of N ss at the M/S interface. © Science China Press and Springer-Verlag Berlin Heidelberg 2012.