Akademik Veri Yönetim Sistemi
Journal of Alloys and Compounds, cilt.552, ss.437-442, 2013 (SCI-Expanded)
The Fe3O4/Si junctions have been fabricated. The Fe3O4 NPs have been characterized by using TEM and XRD. Detailed study of the current-voltage (I-V) plots and capacitance-voltage measurements of the device (atf= 500 kHz) has been executed. The characteristic parameters of the structure such as ideality factor, barrier height, and series resistance have been calculated from the I-V measurements. The rectification ratio was determined to be ∼3 × 104. The I-V characteristics clearly reveal the mechanism as ohmic at low voltage and that of trap-filled space charge limited current (SCLC) at higher voltage. The effect of X-ray irradiation on the junction characteristics has been studied using in situ current-voltage measurements. Diode parameters are found to vary as a function of the irradiation dose. © 2012 Elsevier B.V. All rights reserved.