XAFS study on the boron substituted LiGaO2 semiconductor material

GÜNDOĞMUŞ H., Gunaydin S., Klysubun W., Ozkendir O. M.

Solid State Ionics, cilt.346, 2020 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 346
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.ssi.2019.115201
  • Dergi Adı: Solid State Ionics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Absorption spectroscopy, Electronic structure, Lithium gallate, Semiconductors
  • Hakkari Üniversitesi Adresli: Evet

Özet

An XAFS study was performed on the electronic and crystal structure properties of LiGa1-xBxO2 (LGO) material in where boron atoms were substituted at the gallium sites. Studies were carried out by the X-ray powder diffraction (XRD) patterns and supported by the Extended-XAFS data. The analysis on the substituted materials revealed interesting mechanisms at the boron sites that preserved the crystal symmetry in the entire bulk. It was determined that, boron atoms do not lie in the Ga sites due to inequivalent ionic radii and formed a crystal LiB3O5, which has the same crystal geometry and space group of the parent LGO. With the presence of the boron atoms on the vicinity of the gallium atoms, tiny shifts on the main edge spectra resulted from the change in the oxidation of the gallium atoms.