Analysis of temperature dependent current-voltage and frequency dependent capacitance-voltage characteristics of Au/CoO/p-Si/Al MIS diode


Microelectronics Reliability, vol.147, 2023 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 147
  • Publication Date: 2023
  • Doi Number: 10.1016/j.microrel.2023.115114
  • Journal Name: Microelectronics Reliability
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Applied Science & Technology Source, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, DIALNET
  • Keywords: Capacitance-voltage, Cobalt oxide, Current-voltage, MIS
  • Hakkari University Affiliated: Yes


In this study, the production and electrical characterization of Schottky circuit elements of Au/CoO/p-Si/Al (MIS) structure were investigated. Diode parameters such as the ideality factor (n), barrier height (Φb) and series resistance of Au/CoO/p-Si/Al structures were calculated from the forward bias I-V characteristics of the diode using the different methods such as Thermionic Emission method (TE), Cheung functions and Norde method. The variations of diode parameters from I-V measurements depending on the temperature were examined. In addition, diffusion potential (Vd), barrier height (Φb), Fermi energy level (Ef) and free carrier concentration (Na) were calculated from the C-V measurements of the diode. The variations of these values with frequency were examined from the C-V measurements.