Extraction of electronic parameters of Schottky diode based on an organic Orcein


Microelectronic Engineering, vol.87, no.12, pp.2525-2530, 2010 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 87 Issue: 12
  • Publication Date: 2010
  • Doi Number: 10.1016/j.mee.2010.06.004
  • Journal Name: Microelectronic Engineering
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2525-2530
  • Keywords: Capacitance measurements, Ideality factor, Orcein, Organic materials, Schottky barrier height
  • Hakkari University Affiliated: Yes


An Au/Orcein/p-Si/Al device was fabricated and the current-voltage measurements of the devices showed diode characteristics. Then the current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the device were investigated at room temperature. Some junction parameters of the device such as ideality factor, barrier height, and series resistance were determined from I-V and C-V characteristics. The ideality factor of 2.48 and barrier height of 0.70 eV were calculated using I-V characteristics. It has been seen that the Orcein layer increases the effective barrier height of the structure since this layer creates the physical barrier between the Au and the p-Si. The interface state density Nss were determined from the I-V plots. The capacitance measurements were determined as a function of voltage and frequency. It was seen that the values of capacitance have modified with bias and frequency. © 2010 Elsevier B.V. All rights reserved.