Investigation of electrical properties of Ni/Crystal Violet (C25H30CIN3)/n-Si/Al diode as a function of temperature

DENİZ A. R., Çaldıran Z., Biber M., İNCEKARA Ü., AYDOĞAN Ş.

Journal of Alloys and Compounds, cilt.763, ss.622-628, 2018 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 763
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1016/j.jallcom.2018.05.295
  • Dergi Adı: Journal of Alloys and Compounds
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.622-628
  • Anahtar Kelimeler: Capacity-voltage, Crystal Violet, Current-voltage, Norde, Schottky diode, Thermionic emission
  • Hakkari Üniversitesi Adresli: Evet

Özet

In this study, Crystal Violet material was used for interface layer of Schottky diode applications. Firtly, chemical cleaning process have been made for boron doped n-Si crystals. After, Al metal was coated on the one surface of crystals by thermal evaporation and crystal violet materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Lastly, Ni metal was coated on Crystal Violet by sputtering. So, we obtained the Ni/Crystal Violet/n-Si/Al Schottky type diode. After the fabrication process of diode, the current-voltage (I-V) and capacity-voltage (C-V) measurements of Ni/Crystal Violet/n-Si/Al Schottky type diode were taken for various temperatures. The some basic diode parameters such as ideality factor (n), barrier height (Φb) and series resistance (Rs) of Ni/Crystal Violet/n-Si/Al were calculated from I-V measurements using different methods (Thermionic Emission, Cheung and Norde functions). Also, diode parameters such as Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the C-V measurements of diode as a function of temperature.