Electrical characteristics of Al2O3/p-Si heterojunction diode and effects of radiation on the electrical properties of this diode

DENİZ A. R., Çaldıran Z., Taşyürek L. B.

Journal of Materials Science: Materials in Electronics, cilt.33, sa.36, ss.26954-26965, 2022 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 33 Sayı: 36
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s10854-022-09359-3
  • Dergi Adı: Journal of Materials Science: Materials in Electronics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.26954-26965
  • Hakkari Üniversitesi Adresli: Evet

Özet

The temperature dependence of the electrical parameters of the Au/α-Al2O3/p-Si/Al heterojunction diode and the variation of these parameters with radiation were investigated. It has been determined that the lnI–V curves of the diode have non-linear plots and this is due to the inhomogeneity in the potential barrier. The ideality factor (n), barrier height (Φb) and series resistance (Rs) values of the diode were calculated depending on the temperature. It was determined that n and Rs values decrease and Φb values increase with the increase in temperature. The voltage coefficients and standard deviation values are calculated using the [(1/n) − 1] − 1/2kT and Φb − 1/2kT graphs of heterojunction diode. The value of Richardson constant was calculated as A* = 7.64 A/K2 cm2 using conventional Richardson plot of ln(I0/T2) against 1/T. In addition, the effects of different X-ray irradiation doses on the I–V characteristics of Au/Al2O3/p-Si/Al heterojunction were examined.