Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Korucu D., Turut A., TURAN R., ALTINDAL Ş.

Materials Science in Semiconductor Processing, cilt.16, sa.2, ss.344-351, 2013 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 16 Sayı: 2
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.mssp.2012.09.015
  • Dergi Adı: Materials Science in Semiconductor Processing
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.344-351
  • Anahtar Kelimeler: Ag/p-InP SBD, G, Impedance spectroscopy, Interface states, Intersection in C, Series resistance
  • Hakkari Üniversitesi Adresli: Evet

Özet

Frequency-dependent electrical characteristics of Ag/p-InP diodes have been determined using impedance spectroscopy at room temperature. Series resistance (Rs) and interface state(s) (Nss) values were extracted from capacitance (C) and conductance (G/w) data using the Nicollian and Goetzberger and Hill-Coleman methods, respectively. C and G/w data were also corrected in the whole measured bias voltage range to obtain real diode capacitance Cc and conductance Gc values in order to see the effects of Rs. Both the C-V and Rs-V plots showed anomalous peak in depletion region especially at low frequencies due to the existence of Nss. C-V and G/w-V plots crossed at a certain bias voltage and this point shifted toward negative bias voltages with increasing frequency and then disappeared at 3 MHz. Also, decrease in C values corresponds to an increase in G/w values in the same bias voltages. © 2012 Elsevier Ltd.