Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Korucu D., Turut A., TURAN R., ALTINDAL Ş.

Materials Science in Semiconductor Processing, vol.16, no.2, pp.344-351, 2013 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 16 Issue: 2
  • Publication Date: 2013
  • Doi Number: 10.1016/j.mssp.2012.09.015
  • Journal Name: Materials Science in Semiconductor Processing
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.344-351
  • Keywords: Ag/p-InP SBD, G, Impedance spectroscopy, Interface states, Intersection in C, Series resistance
  • Hakkari University Affiliated: Yes

Abstract

Frequency-dependent electrical characteristics of Ag/p-InP diodes have been determined using impedance spectroscopy at room temperature. Series resistance (Rs) and interface state(s) (Nss) values were extracted from capacitance (C) and conductance (G/w) data using the Nicollian and Goetzberger and Hill-Coleman methods, respectively. C and G/w data were also corrected in the whole measured bias voltage range to obtain real diode capacitance Cc and conductance Gc values in order to see the effects of Rs. Both the C-V and Rs-V plots showed anomalous peak in depletion region especially at low frequencies due to the existence of Nss. C-V and G/w-V plots crossed at a certain bias voltage and this point shifted toward negative bias voltages with increasing frequency and then disappeared at 3 MHz. Also, decrease in C values corresponds to an increase in G/w values in the same bias voltages. © 2012 Elsevier Ltd.