Properties of p-type sns thin films prepared by chemical bath deposition


Guneri E., Gode F., ULUTAŞ C., Kirmizigul F., Altindemir G., GÜMÜŞ C.

Chalcogenide Letters, vol.7, no.12, pp.685-694, 2010 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 7 Issue: 12
  • Publication Date: 2010
  • Journal Name: Chalcogenide Letters
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.685-694
  • Keywords: Chemical bath deposition, SnS, Thin films
  • Hakkari University Affiliated: Yes

Abstract

Thin film of tin monosulfide (SnS) is deposited onto glass substrates using chemical bath deposition (CBD) at room temperature for 24 h. The structural, electrical, and optical properties of the film are determined using X-ray diffraction (XRD), energy-dispersive X--ray (EDX), scanning electron microscopy (SEM), Hall Effect measurement and spectrophometry. Obtained films were polycrystalline of an orthorhombic structure. The crystallite size, lattice parameters, defective location density, and texture coefficient of the film are calculated from the XRD data. EDX analysis revealed that thin film has a nearly stoichiometric composition (Sn/S, 54.13/45.8). From the Hall Effect measurement, it was found that SnS thin film exhibits p-type conduction. Its resistivity and mobility were calculated to be 2.53×10 5 Ω.cm and 8.99×10 5 cm2 /V.s respectively. The activation energy is calculated to be 0.527 eV in temperature range from 353-573 K by Arrhenius equation. Optical band gap values of direct and indirect transitions are estimated to be 1.37 eV and 1.05 eV, respectively.