Fabrication of the Au/guaiazulene-indanedione derivative IMID/p-Si/Al heterojunction photodiode and the effect of the IMID interface layer on electrical and optical characteristics
OPTICAL AND QUANTUM ELECTRONICS, cilt.58, sa.491, ss.1-11, 2026 (SCI-Expanded)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 58 Sayı: 491
- Basım Tarihi: 2026
- Doi Numarası: 10.1007/s11082-026-09105-7
- Dergi Adı: OPTICAL AND QUANTUM ELECTRONICS
- Derginin Tarandığı İndeksler: Academic Search Ultimate (EBSCO), Engineering Source (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest), Aerospace Database, Science Citation Index Expanded (SCI-EXPANDED), Compendex, INSPEC
- Sayfa Sayıları: ss.1-11
- Hakkari Üniversitesi Adresli: Evet
Özet
Organic interfacial layers have emerged as an effective strategy for tailoring the electrical and optoelectronic characteristics of silicon-based Schottky photodiodes through interface engineering. In this work, a donor–π–acceptor guaiazulene–indanedione derivative (IMID) was employed as an organic interfacial layer to fabricate an Au/IMID/p-Si/Al heterojunction photodiode, and its structural, optical, electrical, and photoresponse characteristics were systematically investigated. The deposited IMID thin film exhibited a thickness of 74.8 ± 1.5 nm, an average crystallite size of 7.4 nm, and an optical band gap of 3.05 eV. Under dark conditions, the fabricated device showed an ideality factor of 1.17 and a barrier height of 0.83 eV, indicating improved junction quality after incorporation of the IMID layer. Upon increasing the illumination intensity from 20 to 100 mW cm⁻2 , the device exhibited a photosensitivity of 5238, a maximum responsivity of 0.0140 A W⁻1 , and a specific detectivity of 4.79 × 101 ° Jones. Repeated ON/OFF illumination measurements further demonstrated stable switching behavior with rise and decay times of approximately 2.53 s and 2.97 s, respectively. The obtained results demonstrate that the IMID interfacial layer effectively modifies charge transport across the metal/semiconductor interface and provides a promising molecular platform for interface engineering in silicon-based hybrid optoelectronic devices.