Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures

Baydilli E., Tan S., Tecimer H. U., ALTINDAL Ş.

Physica B: Condensed Matter, cilt.598, 2020 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 598
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.physb.2020.412457
  • Dergi Adı: Physica B: Condensed Matter
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Barrier height, Current-transport mechanisms, Graphene doping, Metal-polymer-semicondutor, Thermionic emission
  • Hakkari Üniversitesi Adresli: Hayır

Özet

The possible current-transport mechanisms (CTMs) of Au/(%7Gr-doped)PVA/n-GaAs structure was examined between 80 K and 360 K. The forward bias semi-logarithmic I–V curves have two different linear regions; as 0.30 V and 0.56 V (Region I), and 0.72 V and 0.92 V (Region II). Contrary to classical thermionic emission (TE) theory, the ideality factor (n) decreases but the zero bias barrier height (ΦBo) increases while the temperature increases for both regions. The plots of n vs ΦB0, q/2 kT vs ΦBo and q/2 kT vs n−1-1 have two linear regions from 80 K to 160 K and 180 K–360 K. This indicates the Double Gaussian Distribution (DGD). Experimental Richardson constant (A*) was acquired as 8.73 A/cm2K2 and 8.14 A/cm2K2 for Region I and II which are quite close to theoretical A* value for n-GaAs. Consequently, the predominant CTMs at M/S interfaces can be clarified by DGD on the basis of TE.