Akademik Veri Yönetim Sistemi
Micro and Nanostructures, ss.1-10, 2025 (SCI-Expanded)
In this study, the effect of molybdenum trioxide (MoO3) nanopowder as a thin film layer on the
performance of junction diodes was investigated and the fabrication of Au/MoO3/n-Si/Al device
structure with this material was achieved. In the experimental process, Al was thermally deposited
on one surface of the silicon wafer and annealed at 450 °C for 10 min to establish an
ohmic contact. A thin film of MoO3 approximately 15 nm thick was deposited on the n-Si surface
by thermal evaporation at a 10−7 Torr high vacuum. On top of this layer, a 100 nm Au layer was
deposited by thermal evaporation using a circular mask. The reference Au/n-Si/Al diode was
fabricated under identical conditions without the MoO3 layer to evaluate the influence of the oxide
interlayer on the device characteristics. The electrical performance of the devices was characterized
through I–V measurements at 300 K. The diode parameters, including the barrier
height (BH) and the ideality factor (IF), were extracted using the TE theory and further analyzed
using the Cheung and Norde techniques. The BH (Φb) and IF (n) values of the reference Au/n-
Si/Al diode were calculated as 0.65 eV and 2.06, respectively. In contrast, the diodes with the
MoO3 interlayer exhibited Φb values ranging from 0.70 to 0.73 eV and n values between 1.69
and 1.73. The increased ideality factor was attributed to the influence of series resistance, while
the variations in BH were related to the properties of the MoO3/n-Si interface. Among the devices
fabricated, the diode with the best performance (referred to as device 2) showed an IF of
1.69 and a BH of 0.73 eV. This device was selected for detailed analysis and its characteristics
were further examined using the Cheung and Norde methods. In addition, C–V, G-V, and Z-V
measurements at various frequencies were used to derive key device parameters, particularly
the BH, highlighting the role of frequency-dependent behavior