Heterojunction diode application of yttrium ıron oxide (Y3Fe5O12)

DENİZ A. R., Çaldıran Z.

Journal of Materials Science: Materials in Electronics, vol.33, no.8, pp.5233-5243, 2022 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 33 Issue: 8
  • Publication Date: 2022
  • Doi Number: 10.1007/s10854-022-07712-0
  • Journal Name: Journal of Materials Science: Materials in Electronics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.5233-5243
  • Hakkari University Affiliated: Yes


In this study, the Cr/Y3Fe5O12/p-Si/Al heterojunction diode was fabricated with coating the Y3Fe5O12 interface material on p-Si using spin coating method. The role of Y3Fe5O12 material on the current conduction characteristics of diodes was investigated. It has been determined that this material improves the basic diode parameters of the diode. This is due to the electrical conductivity of Y3Fe5O12 material. The current–voltage (I–V) measurements of this diode were analyzed for various temperature values. Basic diode parameters such as barrier height (Φb), series resistance (Rs) and ideality factor (n) values are strongly dependent on temperature, implying the presence of Schottky barrier inhomogeneities. While the Φb value increases with increasing temperature, the n and the Rs values decrease. The effective Richardson constant of the diode was calculated as A* = 0.000028 A/K2 cm2. This value is smaller than the theoretical value (A* = 32 A/K2 cm2 for p-Si). This is attributed to the inhomogeneous nature of the potential barrier. Also, capacitance–voltage (C–V) measurements Cr/Y3Fe5O12/p-Si/Al heterojunction were analyzed for different frequency values. It has been determined that the capacity decreases with increasing frequency.