Yayınlar & Eserler

Yayın Ağı
Makaleler 15
Tümü (15)
SCI-E, SSCI, AHCI (14)
SCI-E, SSCI, AHCI, ESCI (14)
Scopus (14)
TRDizin (1)

1. The role of Cu-doping in DLC interlayers on the electrical parameters of MIS-type Schottky devices: A Capacitance-Conductance analysis

Karasu Y. E., Kaymaz A., EVCİN BAYDİLLİ E., Durmuş H., ALTINDAL Ş.
Applied Surface Science , cilt.736, 2026 (SCI-Expanded, Scopus) identifier

2. Comprehensive dielectric analysis of Schottky devices with Cu-doped DLC interlayer: Temperature effects and polarization mechanisms

Baran A., Özel E., EVCİN BAYDİLLİ E., Kaymaz A., ALTINDAL Ş.
Materials Science and Engineering: B , cilt.327, 2026 (SCI-Expanded, Scopus) identifier

3. Negative capacitance and negative dielectric behavior of MIS device with Rhenium-Type Schottky contacts

Güler M. İ., Kaymaz A., EVCİN BAYDİLLİ E., Durmuş H., ALTINDAL Ş.
Solid-State Electronics , cilt.229, 2025 (SCI-Expanded, Scopus) identifier

4. Dielectric properties and polarization mechanisms of the DLC-interlayered Schottky structures under low-moderate and high-temperatures

Bozkurt R. B., EVCİN BAYDİLLİ E., Kaymaz A., ALTINDAL Ş., Durmuş H.
Materials Science and Engineering: B , cilt.320, 2025 (SCI-Expanded, Scopus) identifier

5. The effect of Cu-doping to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices

EVCİN BAYDİLLİ E.
Materials Science in Semiconductor Processing , cilt.184, 2024 (SCI-Expanded, Scopus) identifier

6. Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices

EVCİN BAYDİLLİ E., Kaymaz A., ALTINDAL Ş.
Radiation Physics and Chemistry , cilt.222, 2024 (SCI-Expanded, Scopus) identifier

7. The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor

Kaymaz A., Baydilli E.
IEEE Sensors Journal , cilt.24, sa.11, ss.17693-17700, 2024 (SCI-Expanded, Scopus) identifier

8. Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact

Kaymaz A., EVCİN BAYDİLLİ E., Tecimer H., Uslu Tecimer H., ALTINDAL Ş.
Materials Today Communications , cilt.35, 2023 (SCI-Expanded, Scopus) identifier

9. The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures

EVCİN BAYDİLLİ E.
Gazi University Journal of Science Part A: Engineering and Innovation , cilt.10, 2023 (TRDizin) identifier

10. Investigation of the dielectric properties of Au/Bi4Ti3O12-SiO2/n-Si (MFIS) type structures depending on gamma-irradiation

Baydilli E.
Microelectronics Reliability , cilt.140, 2023 (SCI-Expanded, Scopus) identifier

11. Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements

Kaymaz A., Evcin Baydilli E., Uslu Tecimer H., ALTINDAL Ş., AZIZIAN-KALANDARAGH Y.
Radiation Physics and Chemistry , cilt.183, 2021 (SCI-Expanded, Scopus) identifier

12. Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures

Baydilli E., Tan S., Tecimer H. U., ALTINDAL Ş.
Physica B: Condensed Matter , cilt.598, 2020 (SCI-Expanded, Scopus) identifier

13. On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K

Evcin Baydilli E., Kaymaz A., Uslu Tecimer H., ALTINDAL Ş.
Journal of Electronic Materials , cilt.49, sa.12, ss.7427-7434, 2020 (SCI-Expanded, Scopus) identifier

14. The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD)

Evcin Baydilli E., ALTINDAL Ş., Tecimer H., Kaymaz A., Uslu Tecimer H.
Journal of Materials Science: Materials in Electronics , cilt.31, sa.20, ss.17147-17157, 2020 (SCI-Expanded, Scopus) identifier

15. Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements

Kaymaz A., Uslu Tecimer H., Evcin Baydilli E., ALTINDAL Ş.
Journal of Materials Science: Materials in Electronics , cilt.31, sa.11, ss.8349-8358, 2020 (SCI-Expanded, Scopus) identifier
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 5

1. The Detection of the Gamma-Irradiation Effects on Electrical Characteristics of Au/3% Gr-doped PVA/p-Si Type Schottky Structure

EVCİN BAYDİLLİ E.
16 th International Conference on Nuclear Structure Properties (NSP 2023), Karabük, Türkiye, 8 - 10 Mayıs 2023, ss.26, (Özet Bildiri)

2. The Determination of Voltage and Temperature Dependence of Series Resistance of Au/n-GaAs Type M/S Contact

EVCİN E.
MSNG 2022, Ankara, Türkiye, 22 Eylül 2022, (Özet Bildiri)

3. Dielectric properties before and after gamma-irradiation in Au/Bi4Ti3O12-SiO2/n-Si type MFIS structure

EVCİN E.
MSNG 2021, Türkiye, 14 Temmuz 2021, (Özet Bildiri)

4. Negative Dielectric Properties of the Re/n-GaAs (MS) Type Structure

EVCİN E.
IHEC 2021, Ankara, Türkiye, 14 Haziran 2021, (Özet Bildiri)

5. The Investigation of Temperature Dependent Current – Transfer Mechanisms of Au/PVA/n-GaAs

EVCİN E., TECİMER H., ALTINDAL Ş., TECİMER H.
MSNG 2019, 16 Ekim 2019, (Tam Metin Bildiri)
Metrikler

Yayın

20

Yayın (WoS)

14

Yayın (Scopus)

14

Atıf (Scopus)

180

H-İndeks (Scopus)

7

Atıf (Scholar)

198

H-İndeks (Scholar)

8

Atıf (Sobiad)

10

H-İndeks (Sobiad)

2

Tez Danışmanlığı

2
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