Doç. Dr. ESRA EVCİN BAYDİLLİ

Yayın Ağı

SCI, SSCI ve AHCI İndekslerine Giren Dergilerde Yayınlanan Makaleler 12

1. Negative capacitance and negative dielectric behavior of MIS device with Rhenium-Type Schottky contacts

Güler M. İ., Kaymaz A., EVCİN BAYDİLLİ E., Durmuş H., ALTINDAL Ş.

Solid-State Electronics , cilt.229, 2025 (SCI-Expanded)

2. Dielectric properties and polarization mechanisms of the DLC-interlayered Schottky structures under low-moderate and high-temperatures

Bozkurt R. B., EVCİN BAYDİLLİ E., Kaymaz A., ALTINDAL Ş., Durmuş H.

Materials Science and Engineering: B , cilt.320, 2025 (SCI-Expanded)

3. The effect of Cu-doping to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices

EVCİN BAYDİLLİ E.

Materials Science in Semiconductor Processing , cilt.184, 2024 (SCI-Expanded)

4. Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices

EVCİN BAYDİLLİ E., Kaymaz A., ALTINDAL Ş.

Radiation Physics and Chemistry , cilt.222, 2024 (SCI-Expanded)

5. The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor

Kaymaz A., Baydilli E.

IEEE Sensors Journal , cilt.24, sa.11, ss.17693-17700, 2024 (SCI-Expanded)

6. Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact

Kaymaz A., EVCİN BAYDİLLİ E., Tecimer H., Uslu Tecimer H., ALTINDAL Ş.

Materials Today Communications , cilt.35, 2023 (SCI-Expanded)

7. Investigation of the dielectric properties of Au/Bi4Ti3O12-SiO2/n-Si (MFIS) type structures depending on gamma-irradiation

Baydilli E.

Microelectronics Reliability , cilt.140, 2023 (SCI-Expanded)

8. Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements

Kaymaz A., Evcin Baydilli E., Uslu Tecimer H., ALTINDAL Ş., AZIZIAN-KALANDARAGH Y.

Radiation Physics and Chemistry , cilt.183, 2021 (SCI-Expanded)

9. Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures

Baydilli E., Tan S., Tecimer H. U., ALTINDAL Ş.

Physica B: Condensed Matter , cilt.598, 2020 (SCI-Expanded)

10. On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K

Evcin Baydilli E., Kaymaz A., Uslu Tecimer H., ALTINDAL Ş.

Journal of Electronic Materials , cilt.49, sa.12, ss.7427-7434, 2020 (SCI-Expanded)

11. The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD)

Evcin Baydilli E., ALTINDAL Ş., Tecimer H., Kaymaz A., Uslu Tecimer H.

Journal of Materials Science: Materials in Electronics , cilt.31, sa.20, ss.17147-17157, 2020 (SCI-Expanded)

12. Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements

Kaymaz A., Uslu Tecimer H., Evcin Baydilli E., ALTINDAL Ş.

Journal of Materials Science: Materials in Electronics , cilt.31, sa.11, ss.8349-8358, 2020 (SCI-Expanded)

Diğer Dergilerde Yayınlanan Makaleler 1

1. The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures

EVCİN BAYDİLLİ E.

Gazi University Journal of Science Part A: Engineering and Innovation , cilt.10, 2023 (Hakemli Dergi)

Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler 5

1. The Detection of the Gamma-Irradiation Effects on Electrical Characteristics of Au/3% Gr-doped PVA/p-Si Type Schottky Structure

EVCİN BAYDİLLİ E.

16 th International Conference on Nuclear Structure Properties (NSP 2023), Karabük, Türkiye, 8 - 10 Mayıs 2023, ss.26, (Özet Bildiri)

2. The Determination of Voltage and Temperature Dependence of Series Resistance of Au/n-GaAs Type M/S Contact

EVCİN E.

MSNG 2022, Ankara, Türkiye, 22 Eylül 2022, (Özet Bildiri)

3. Dielectric properties before and after gamma-irradiation in Au/Bi4Ti3O12-SiO2/n-Si type MFIS structure

EVCİN E.

MSNG 2021, Türkiye, 14 Temmuz 2021, (Özet Bildiri)

4. Negative Dielectric Properties of the Re/n-GaAs (MS) Type Structure

EVCİN E.

IHEC 2021, Ankara, Türkiye, 14 Haziran 2021, (Özet Bildiri)

5. The Investigation of Temperature Dependent Current – Transfer Mechanisms of Au/PVA/n-GaAs

EVCİN E., TECİMER H., ALTINDAL Ş., TECİMER H.

MSNG 2019, 16 Ekim 2019, (Tam Metin Bildiri)

Metrikler

Doç. Dr. ESRA EVCİN BAYDİLLİ

Yayınlar & Eserler

1. Negative capacitance and negative dielectric behavior of MIS device with Rhenium-Type Schottky contacts

2. Dielectric properties and polarization mechanisms of the DLC-interlayered Schottky structures under low-moderate and high-temperatures

3. The effect of Cu-doping to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices

4. Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices

5. The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor

6. Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact

7. Investigation of the dielectric properties of Au/Bi4Ti3O12-SiO2/n-Si (MFIS) type structures depending on gamma-irradiation

8. Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements

9. Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures

10. On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K

11. The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD)

12. Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements

1. The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures

1. The Detection of the Gamma-Irradiation Effects on Electrical Characteristics of Au/3% Gr-doped PVA/p-Si Type Schottky Structure

2. The Determination of Voltage and Temperature Dependence of Series Resistance of Au/n-GaAs Type M/S Contact

3. Dielectric properties before and after gamma-irradiation in Au/Bi4Ti3O12-SiO2/n-Si type MFIS structure

4. Negative Dielectric Properties of the Re/n-GaAs (MS) Type Structure

5. The Investigation of Temperature Dependent Current – Transfer Mechanisms of Au/PVA/n-GaAs

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