Evaluation of lateral barrier height of inhomogeneous photolithography- fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K

Korucu D., EFEOĞLU H., Turut A., ALTINDAL Ş.

Materials Science in Semiconductor Processing, cilt.15, sa.5, ss.480-485, 2012 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 15 Sayı: 5
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1016/j.mssp.2012.03.005
  • Dergi Adı: Materials Science in Semiconductor Processing
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.480-485
  • Anahtar Kelimeler: Barrier height, Effective barrier height, Flat band barrier height, Ideality factor, Photolithography, Schottky barrier inhomogeneity, Temperature dependence, To anomaly
  • Hakkari Üniversitesi Adresli: Evet

Özet

In order to evaluate current conduction mechanism in the Au/n-GaAs Schottky barrier diode (SBD) some electrical parameters such as the zero-bias barrier height (BH) Φ bo(I-V) and ideality factor (n) were obtained from the forward bias current-voltage (I-V) characteristics in wide temperature range of 80-320 K by steps of 10 K. By using the thermionic emission (TE) theory, the Φ bo(I-V) and n were found to depend strongly on temperature, and the n decreases with increasing temperature while the Φ bo(I-V) increases. The values of Φ bo and n ranged from 0.600 eV and 1.51(80 K) to 0.816 eV and 1.087 (320 K), respectively. Such behavior of Φ bo and n is attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution (GD) of BHs at Au/n-GaAs interface. In the calculations, the electrical parameters of the experimental forward bias I-V characteristics of the Au/n-GaAs SBD with the homogeneity in the 80-320 K range have been explained by means of the TE, considering GD of BH with linear bias dependence. © 2012 Elsevier Ltd.