Published journal articles indexed by SCI, SSCI, and AHCI
Electrical characteristics of Al2O3/p-Si heterojunction diode and effects of radiation on the electrical properties of this diode
Journal of Materials Science: Materials in Electronics
, vol.33, no.36, pp.26954-26965, 2022 (SCI-Expanded)
Heterojunction diode application of yttrium ıron oxide (Y3Fe5O12)
Journal of Materials Science: Materials in Electronics
, vol.33, no.8, pp.5233-5243, 2022 (SCI-Expanded)
The temperature dependence of current–voltage characteristics of V2O5/p-Si heterojunction diode
Journal of Materials Science: Materials in Electronics
, vol.32, no.14, pp.18886-18899, 2021 (SCI-Expanded)
Preparation and characterization of sol–gel-derived n-ZnO thin film for Schottky diode application
Applied Physics A: Materials Science and Processing
, vol.119, no.2, pp.547-552, 2015 (SCI-Expanded)
Articles Published in Other Journals
Investigation of I-V-T Charactersitics of Cr/Indigo Carmine/p-Si/Al Heterojunction Diode
Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi
, vol.11, no.4, pp.2790-2802, 2021 (Peer-Reviewed Journal)
Refereed Congress / Symposium Publications in Proceedings
CHANGE OF SOME ELECTRICAL PARAMETERS OF Au/CoO/p-Si/Al DIODE WITH TEMPERATURE
4TH INTERNATIONAL BLACK SEA MODERN SCIENTIFIC RESEARCH CONGRESS, Rize, Turkey, 02 June 2023
USAGE OF CoO NANOPARTS IN DIODE APPLICATIONS AND ANALYSIS OF THE ELECTRICAL PROPERTIES OF THE DIODE
4TH INTERNATIONAL BLACK SEA MODERN SCIENTIFIC RESEARCH CONGRESS, Rize, Turkey, 02 June 2023
The Use of α-Al2O3 Material as an Interface Layer in Schottky Diode Applications and the Effect of Radiation Diode Characteristics
Karadeniz 11th International Conference on Applied Sciences, Rize, Turkey, 17 December 2022
Investigation of I-V-T Characteristics of Ni/ α-Al2O3/p-Si/Al Diode
Karadeniz 11th International Conference on Applied Sciences, Rize, Turkey, 17 December 2022
Heterojunction Diode Performance of PbO2 material and Variation of Electrical Properties of Heterojunction Depending on X-Ray Radiation
ANADOLU 9TH INTERNATIONAL CONFERENCE ON APPLIED SCIENCES, Diyarbakır, Turkey, 11 June 2022
Variation of Basic Diode Parameters of Ni/PbO2/n-Si/Al Heterojunction as a Function of Temperature
ANADOLU 9TH INTERNATIONAL CONFERENCE ON APPLIED SCIENCES, Diyarbakır, Turkey, 11 June 2022
The Electrical Characteristics of the Ni/Crystal Violet (C25H30ClN3)/n-Si/Al Schottky Type Diode Depending on Temperature
INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES ICSMD-2017, Konya, Turkey, 17 - 19 August 2017
The Effect of Fe3O4 Nanoparticles on the Power Conversion Efficiency of P3HT:PCBM Based Organic Solar Cells
INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES ICSMD-2017, Konya, Turkey, 17 - 19 August 2017
Electrical Characterization of Au/SrTiO3/n-Si/Al Heterojunction Device
INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES ICSMD-2017, Konya, Turkey, 17 - 19 August 2017
Au Anthracene N Si Al Heterojunction of Barrier Height Determining Different Methods
IPCAP 2016, Erzurum, Turkey, 25 - 27 February 2016
The Effect of Series Resistance on Au Anthracene N Si Al Heterojunctions at Low Temperatures
IPCAP 2016, Erzurum, Turkey, 25 - 27 February 2016
Current Voltage I V and Capacitance Voltage C V Characterizatics of the Au poly 3 PHMP p Si Al Junction Device
IPCAP 2016, Erzurum, Turkey, 25 - 27 February 2016
The Effect of Annealing on Pentacene PTDCI Organic Solar Cells Characteristics
9th INTERNATIONAL PHYSICS CONFERENCE OF THE BALKAN PHYSICAL UNION – BPU9, İstanbul, Turkey, 24 - 27 August 2015
The Heterojunction Applications of the Graphene Oxide Fe3O4 GO Fe3O4 Nanocomposites Material
9th INTERNATIONAL PHYSICS CONFERENCE OF THE BALKAN PHYSICAL UNION – BPU9, İstanbul, Turkey, 24 - 27 August 2015
The Effect of Organic Interface Material on Capacity Voltage C V Measuements of the Metal Organic Semiconductor Contacts
INTERNATIONAL SEMICONDUCTOR SCIENCE TECHNOLOGY CONFERENCE 2015, İzmir, Turkey, 11 - 13 May 2015
The Analysis of Frequency Dependence Capacitence Voltage C V Curves of Au Fe3O4 n Si Al Rectifying Device
INETRNATIONAL SEMICONDUCTOR SCIENCE TECHNOLOGY CONFERENCE 2015, İzmir, Turkey, 11 - 13 May 2015
Schottky Contact Applications of the Quinoline Organic Material
INTERNATIONAL SEMICONDUCTOR SCIENCE TECHNOLOGY CONFERENCE, İzmir, Turkey, 11 - 13 May 2015
Electrical Characterization of Au Fe3O4 p Si Al Rectifier Devices Depending on X Ray Radiation Dos
INTERNATIONAL SEMICONDUCTOR SCIENCE TECHNOLOGY CONFERENCE 2015, İzmir, Turkey, 11 - 13 May 2015
Optical and Electrical Characterization of n ZnO p Si Heterojunction
INTERNATIOANAL SEMICONDUCTOR SCIENCE TECHNOLOGY CONFERENCE, İzmir, Turkey, 11 - 13 May 2015
CURRENT VOLTAGE I-V CHARACTERSITICS OF Sn /GaTe /p-Si /Al RECTIFYING CONTACTS
International Semiconductor Science Technology Conference, İstanbul, Turkey, 13 - 15 January 2014
The Electrical Characterization of Au Aminopyridine p-Si Al Rectifying Contact with Organic İnterface
International Semiconductor Science Technology Conference, İstanbul, Turkey, 13 - 15 January 2014
THE ELECTRICAL CHARACTERIZATION of Au F3O4 p Si Al RECTIFYING CONTACT WITH Fe3O4 INTERFACE
İnternational Semiconductor Science Technology Conference, 13 - 15 January 2014
Au AMİNOPİRİDİ p Si Al ve Au ANTRAKİNON p Si Al metal yarıiletken doğrultucu kontakların X ışını radyasyonuna bağlı karakterizasyonu
Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, Bodrum/MUĞLA, Turkey, 5 - 08 September 2012
Au ANTRAKİNON p Si Al Schottky diyodunun X ışını radyasyonuna bağlı akım voltaj I V karakteristiğinin incelenmesi
Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, Bodrum/MUĞLA, Turkey, 5 - 08 September 2012
Au Anthraquınone n Si Al Shottky Diyodunun Sıcklığ Bağlı Akım Voltaj I V Karakteristiğinin incelenmesi
Türkiye Fizik Derneği 29. Uluslararası Fizik Kongresi, Bodrum/MUĞLA, Turkey, 5 - 08 September 2012
Au Anthraquınone p Si Al Schottky diyodunun sıcaklığa bağlı akım voltaj I V karkteristiğinin incelenmesi
Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, Bodrum/MUĞLA, Turkey, 5 - 08 September 2012